10N80L-TF1-T

**10N80L-TF1-T-VB MOSFET** is a single N-channel MOSFET in TO220F package. The device has a drain-source voltage (VDS) of 800V and operates at a gate-source voltage (VGS) of plus or minus 30V. The threshold voltage (Vth) is 3.5V, the drain-source on-resistance (RDS(ON)) is 770mΩ (at VGS=10V), and the drain current (ID) is 7A. Manufactured using SJ_Multi-EPI technology, it is suitable for various fields and modules.